june 2000 - ed: 2b 1/4 ? bar 42 bar 43, a, c, s small signal schottky diodes symbol parameter value unit v rrm repetitive peak reverse voltage 30 v i f continuous forward current 100 ma i fsm surge non repetitive forward current tp=10ms sinusoidal 750 ma p tot power dissipation (note 1) t amb =25 c 250 mw t stg maximum storage temperature range - 65 to +150 c tj maximum operating junction temperature * 150 c t l maximum temperature for soldering during 10s 260 c note 1: for double diodes, ptot is the total power dissipation of both diodes. absolute ratings (limiting values) sot-23 (plastic) k n.c. a k a1 a1 a2 a k1 k2 k2 k1 a2 bar42/bar43 bar43a BAR43C bar43s *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink symbol test conditions value unit r th(j-a) junction-ambient * 500 c/w * mounted on epoxy board with recommended pad layout. thermal resistance general purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. description
bar 42/bar 43, a, c, s 2/4 symbol test conditions min. typ. max. unit v br tj = 25 c i r = 100 m a 30 v v f * tj = 25 c bar 42 i f = 10 ma 0.35 0.4 v i f = 50 ma 0.5 0.65 bar 43 i f = 2 ma 0.26 0.33 i f = 15 ma 0.45 all i f = 100 ma 1 i r ** tj = 25 cv r = 25v 500 na tj = 100 c 100 m a static characteristics electrical characteristics symbol test conditions min. typ. max. unit ctj=25 cv r = 1v f = 1mhz 7 pf trr tj = 25 ci f =10ma i r =10ma i rr = 1ma r l = 100 w 5ns h *tj=25 cr l =50k w c l = 300 pf f = 45mhz v i = 2v for bar 43 80 % dynamic characteristics 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.00e+0 2.00e-3 4.00e-3 6.00e-3 8.00e-3 1.00e-2 1.20e-2 1.40e-2 1.60e-2 1.80e-2 2.00e-2 vfm(v) ifm(a) tj=100 c tj=50 c tj=25 c fig. 1-1: forward voltage drop versus forward current (typical values, low level). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1e-3 1e-2 1e-1 5e-1 vfm(v) ifm(a) tj=100 c tj=50 c tj=25 c fig. 1-2: forward voltage drop versus forward current (typical values, high level). pulse test: * tp = 380 m s, d <2% ** tp = 5 ms, d <2% * detection effeciency
bar 42/bar 43, a, c, s 3/4 0 5 10 15 20 25 30 1e-2 1e-1 1e+0 1e+1 1e+2 vr(v) ir( m a) tj=50 c tj=25 c tj=100 c fig. 2: reverse leakage current versus reverse voltage applied (typical values). 0 25 50 75 100 125 150 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 tj( c) ir( m a) vr=30v fig. 3: reverse leakage current versus junction temperature. 12 5102030 1 2 5 10 vr(v) c(pf) f=1mhz tj=25 c fig. 4: junction capacitance versus reverse voltage applied (typical values). 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 0.01 0.10 1.00 tp(s) zth(j-a)/rth(j-a) t d =tp/t tp single pulse d = 0.1 d = 0.2 d = 0.5 fig. 5: relative variation of thermal impedance junction to ambient versus pulse duration (epoxy fr4 with recommendedpad layout, e(cu)=35 m m). 0 5 10 15 20 25 30 35 40 45 50 150 200 250 300 350 s(cu) (mm ) rth(j-a) ( c/w) p=0.25w fig. 6: thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board fr4, copper thickness: 35 m m).
bar 42/bar 43, a, c, s 4/4 package mechanical data sot-23 (plastic) b e s e e1 a d c l h a1 ref. dimensions millimeters inches min. max. min. max. a 0.89 1.4 0.035 0.055 a1 0 0.1 0 0.004 b 0.3 0.51 0.012 0.02 c 0.085 0.18 0.003 0.007 d 2.75 3.04 0.108 0.12 e 0.85 1.05 0.033 0.041 e1 1.7 2.1 0.067 0.083 e 1.2 1.6 0.047 0.063 h 2.1 2.75 0.083 0.108 l 0.6 typ. 0.024 typ. s 0.35 0.65 0.014 0.026 information furnished is believed to be accurate and reliable. however,stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com 0.9 0.035 0.9 0.035 1.9 0.075 mm inch 2.35 0.92 1.1 0.043 1.1 0.043 1.45 0.037 0.9 0.035 foot print dimensions ordering type marking package weight base qty delivery mode bar42 d94 sot-23 0.01g 3000 tape & reel bar43 d95 sot-23 0.01g 3000 tape & reel bar43a db1 sot-23 0.01g 3000 tape & reel BAR43C db2 sot-23 0.01g 3000 tape & reel bar43s da5 sot-23 0.01g 3000 tape & reel epoxy meets ul94,v0
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